半导体器件在辐射作用下的电学输出性能研究

The study of the electrical capabilities of silicon diode on irradiating

摘要: 半导体结型器件是决定辐射伏特效应同位素电池能量转换效率的核心部件。采用加速器产生的不同能量电子束和63Ni源的β射线对硅基PIN结型器件进行辐照，在线测量了其电学输出性能。当电子束能量为18 keV，可得到大于4%的能量转换效率；电子束能量为6 keV，能量转换效率在0.16%～0.33%之间；活度2.96×108 Bq的63Ni源片辐照的能量转换效率为0.1%左右。

Abstract: Semiconductor diode is the core of betavoltaic microbattery, it is the key to decide energy conversion efficiency. A sort of silicon diodes were irradiated by electron beam and 63Ni, measured their electrical capabilities on line. The energy conversion efficiency was higher than 4%, between 0.16% and 0.33% and about 0.1% when irradiated by the energy of electron beam was 18 keV, 6 keV, and 2.96×108 Bq of 63Ni respective.