Electrical Capabilities of Silicon Diode on Tritium-titanium Source Irradiating

Some tritium-titanium sources with different amount of titanium and tritium were prepared. The silicon semiconductor junction devices were irradiated by the tritium-titanium sources and their electrical output data were measured and analyzed. The results showed that electrical current could be produced as the junction devices irradiated by these tritium-titanium sources, but the I_sc and amount of tritium weren’t direct proportion because of the absorbability of titanium to β ray of tritium. These results were useful to the design, development and use of tritium powered betavoltaic battery.