The study of the electrical capabilities of silicon diode on irradiating
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Abstract
Semiconductor diode is the core of betavoltaic microbattery, it is the key to decide energy conversion efficiency. A sort of silicon diodes were irradiated by electron beam and 63Ni, measured their electrical capabilities on line. The energy conversion efficiency was higher than 4%, between 0.16% and 0.33% and about 0.1% when irradiated by the energy of electron beam was 18 keV, 6 keV, and 2.96×108 Bq of 63Ni respective.
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