14C大面积平面源的研制

Preparation of Large Size 14C Planar Source

  • 摘要: 为了解铝阳极氧化膜的吸附性能对制备14C大面积平面源的影响,研究不同厚度(4~12 μm)的铝氧化膜对14C的吸附效率,吸附槽中溶液的量对14C的吸附效率、平面源均匀性的影响,以及14C溶液比活度对吸附率的影响,并对研制的14C平面源进行均匀性、牢固性检测,以及发射率定值。结果显示,研制的14C平面源(100 mm×150 mm)均匀性<10%,牢固性<0.01%;使用2πα、2πβ表面发射率标准装置测量14C平面源,坪区达到400 V,每100 V坪斜为0.3%,小能量损失修正因子为0.2%;测量不确定度为2%(k=2)。研制的14C平面源技术参数满足相关平准源标准的要求。

     

    Abstract: The purpose of the work is to research the planar source of 14C with large size by the absorbability of the anodizing membrane. The adsorption of 14C on the anodizing membrane with thickness of 4 to 12 μm were investigated. The adsorption of 14C and the uniformity of the planar source were investigated on the volume of 14C solution. The specific activity of 14C was investigated on adsorption of 14C. The fastness, the uniformity and the surface emission rate of the planar source of 14C were measured. The result shows that the uniformity of the planar source (100 mm×150 mm) of14C is precede 10%. The plateau length is 400 V, the slope of the plateau is 0.3% per 100 V. The threshold correction is 0.2%. The uncertainty of 14C source measurement is 2% (k=2). The technical parameters of the developed plane source 14C can meet the requirements of relevant standards.

     

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