电镀法制备富集<sup>112</sup>Cd靶

电镀法制备富集¹¹²Cd靶

摘要: 针对CS-30加速器制备高放射性核纯度¹¹¹In（≥99.9%）所用富集¹¹²Cd靶的电镀工艺进行了探索，首次根据加速器束流轰击径迹（束斑）实现定向区域电镀，在此基础上，对影响富集¹¹²Cd靶质量及厚度的各种因素进行研究，确定最佳工艺条件，最终所得富集¹¹²Cd靶表面光亮、致密、牢固，厚度大于65 mg/cm²。同时初步探索了富集¹¹²Cd靶厚与产额的关系，当富集¹¹²Cd靶厚为90 mg/cm²时，¹¹¹In产额为222 MBq/μA·h。

Abstract: The electroplating process of the enriched¹¹²Cd target for producing high radionuclidic purity ¹¹¹In in a CS-30 cyclotron was developed. For the first time, accurate electroplating was achieved based on the track of cyclotron beam bombardment. At the same time, various factors affecting the quality of the enriched ¹¹²Cd target were studied, and then the optimal electroplating conditions were determined. Finally, the enriched ¹¹²Cd targets with a thickness greater than 65 mg/cm² was obtained, which had smooth surface and dense and firm coating. The relationship between enriched ¹¹²Cd target thickness and yield was preliminarily explored. When the enriched ¹¹²Cd target thickness was 90 mg/cm2, the yield of¹¹¹In can reach 222 MBq/μA·h and the radionuclide purity is 99.9%.