电沉积法制备加速器生产<sup>64</sup>Cu的镍靶

电沉积法制备加速器生产⁶⁴Cu的镍靶

摘要: 为制备加速器生产⁶⁴Cu辐照用Ni靶，采用电沉积法研究了电沉积过程中影响Ni靶层质量和质量厚度的主要因素，确定了Ni靶制备工艺条件和参数，为Ni浓度40～50 g/L，盐酸浓度0.05～0.5 mol/L，电沉积温度20～50℃，搅拌器旋转速度150～350 r/min，电流密度10～35 mA/cm²。在此工艺条件下制备出的Ni靶件表面光滑、平整，靶层致密、牢固，可应用于回旋加速器生产⁶⁴Cu。

Abstract: To prepare Ni target with high quality for producing ⁶⁴Cu using cyclotron, the target preparation process by electro-deposition method was studied. The effects of main process parameters on the performance and mass thickness of Ni target were studied. Under the optimum conditions, namely 40-50 g/L of Ni²⁺concentration, 0.05-0.5 mol/L of HCl concentration, 10-35 mA/cm² of current density, rotation rate of 150-350 r/min, at 20-50 ℃, a high quality (good uniformity and adherence) Ni target could be made successfully.