氚钛片辐照硅基半导体器件电学输出性能

Electrical Capabilities of Silicon Diode on Tritium-titanium Source Irradiating

摘要: 制备了多个不同厚度金属钛膜吸附不同量³H的氚钛片，利用这些源片辐照硅基半导体器件，测试并分析了它们的电学输出性能。结果表明，这些氚钛片辐照硅基半导体器件可以输出电流，但由于金属钛对氚源β射线的阻挡，器件输出电流和最大输出功率与钛膜中贮氚量不呈正比增长关系，小的钛膜厚度有利于提高β射线能量利用率。

Abstract: Some tritium-titanium sources with different amount of titanium and tritium were prepared. The silicon semiconductor junction devices were irradiated by the tritium-titanium sources and their electrical output data were measured and analyzed. The results showed that electrical current could be produced as the junction devices irradiated by these tritium-titanium sources, but the I_sc and amount of tritium weren’t direct proportion because of the absorbability of titanium to β ray of tritium. These results were useful to the design, development and use of tritium powered betavoltaic battery.