以SnO_2为支持体的~(68)Ge-~(68)Ga发生器的研究

  • 摘要: 研究了六种SnO2对68Ge和68Ga的吸附性能。以性能较好的一种为支持体制备68Ge-68Ga发生器,并观察了淋洗条件对其性能的影响。以1.0mol/LHCl为淋洗剂,所得4.0mL淋洗剂中68Ga的收率可达60%,68Ge漏穿小于0.04%,且95%可被洗下的68Ga集中在前3.0mL淋洗液中。

     

    Abstract: STUDYOF68Ge┐68GaGENERATORWITHSnO2SUPPORTLiZongquanWangYongxian(RadiopharmaceuticalCenter,ShanghaiInstituteofNuclearResearch,ChineseAcademyofSciences,Shanghai201800)ABSTRACTTheabsorptionpropertiesofthe68Geand68GainsixkindsofSnO2materialsarestudied.Oneofthemisselectedasthesupportforthe68Ge-68Gagenerator.Thedistribu-tioncoeficientof68Geand68Gabetween1.0mol/LHClandSnO2are>1.0×104and2.0,respectively.About60%of68Gacanbeeluatedwith4.0mLeluateof1.0mol/LHCl.Thebreakthroughof68Geislessthan0.04%and95%oftheeluated68Gaisconcentratedinthefirst3.0mLeluate.ThecontentofSnineluateislessthan0.2×10-6.KeywordsSnO268Ge-68Gageneratorabsorptionbreakthrough

     

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